A Novel Method for the growth of Low Temperature Silicon Structures for 3-D Flash Memory Devices

摘要

Low temperature (<400°C) growth of polycrystalline silicon (poly-Si) is carried out using plasma-enhanced chemical vapour deposition (PECVD). After an initial preparation step (IPS) poly-Si was grown on the substrates. Optical band gap studies of the poly-Si films have been correlated to the hydrogen content of the films, as well as to their photoconductivity. Furthermore, the suitability of these films for use as information storage materials for future generation 3-D flash memory devices is investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements via metal-insulator-semiconductor device structures. C-V analysis indicates strong charge storage behaviour for the poly-Si films.