Two-Bit/Cell Characteristics of Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Devices with Recessed Channel Structure

Kyoung-Rok Han; Jong-Ho Lee

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Two-Bit/Cell Characteristics of Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Devices with Recessed Channel Structure

机译：具有凹槽结构的氧化硅-氮化物-氧化硅-硅闪存器件的两位/单元特性

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摘要

We proposed a device structure for novel 2-bit/cell silicon-oxide-nitride-oxide-silicon (SONOS) flash memory and characterized the device for sub-50nm non-volatile memory (NVM) technology. The proposed memory cell has a nitride layer formed on the surface

机译：我们提出了一种用于新型2位/单元氧化硅-氮化硅-氧化硅（SONOS）闪存的器件结构，并针对低于50nm的非易失性存储器（NVM）技术对器件进行了表征。所提出的存储器单元在表面上形成有氮化物层。

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《Japanese journal of applied physics》 |2008年第4issue2期|2687-2691|共5页
作者
Kyoung-Rok Han; Jong-Ho Lee;
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正文语种 eng
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2-bit/cell; V_th margin; recessed channel; SONOS; channel hot electron (CHE); band-to-band hot-hole injection (BtBHHI);

机译：2位/单元V_th余量;凹槽SONOS;沟道热电子（CHE）;带间热空穴注入（BtBHHI）;

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专利

1. Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer [J] . Kyoung-Rok HAN, Jong-Ho LEE Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2006,第37a41期

机译：具有凹槽结构和间隔层氮化物层的高密度NOR型闪存器件的两位/单元编程特性
2. Band-to-Band Hot-hole Erase Characteristics of 2-Bit/cell NOR-type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cell with Spacer-type Storage Node on Recessed Channel Structure [J] . Kyoung-Rok Han, Han-A-Reum Jung, Jong-Ho Lee Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2007,第a33a35aPt2期

机译：隐性通道结构上具有间隔型存储节点的2位/单元NOR型氧化硅-氮化物-氧化硅-硅闪存存储单元的带间热空穴擦除特性
3. Nanoscale Two-bit/cell NAND Silicon-oxide-nitride-oxide-silicon Flash Memories with an Advanced Saddle Structure [J] . Park SS, Oh SW, Dal Kwack K, Journal of the Korean Physical Society . 2009,第1期

机译：具有先进鞍形结构的纳米级两位/单元NAND氧化硅-氮化物-氧化物-硅闪存
4. Optimum Design of Spacer-type Storage Nodes in Recessed Channel Structure for 2-bit/cell SONOS Flash Memory Cell [C] . Kyoung-Rok Han, H. Jung, K. H. Park, International Semiconductor Device Research Symposium . 2007

机译：用于2位/单元SONOS闪存单元的嵌入式通道结构中的间隔型存储节点的最佳设计
5. Engineering the nanocrystal floating gates for nonvolatile flash memory devices. [D] . Zhu, Yan. 2007

机译：设计用于非易失性闪存设备的纳米晶体浮栅。
6. Makes FLASH the difference between the intervention group and the treatment-as-usual group in an evaluation study of a structured education and treatment programme for flash glucose monitoring devices in people with diabetes on intensive insulin therapy: study protocol for a randomised controlled trial [O] . Melanie Schipfer, Carmen Albrecht, Dominic Ehrmann, 2018

机译：在针对强化胰岛素治疗的糖尿病患者快速血糖监测设备的结构化教育和治疗计划的评估研究中使FLASH成为干预组和常规治疗组之间的区别：一项随机对照试验的研究方案
7. Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cells with Modulated Tunneling Oxide [O] . Ga-Won Lee, Sang-Youl Lee, Seung-Dong Yang, 2013

机译：具有调制隧穿氧化物的柱型氧化硅-氮化物-氧化硅-硅闪存单元
8. In the Matter of Certain EPROM, EEPROM, Flash Memory, and Flash Microcontroller211 Semiconductor Devices, and Products Containing Same. Investigation No. 337-TA-395 [R] . 1998

机译：在某些EpROm，EEpROm，闪存和闪存微控制器211半导体器件以及包含它的产品中。调查编号337-Ta-395

Two-Bit/Cell Characteristics of Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Devices with Recessed Channel Structure

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