Hole Mobility In Si(110) p-MOS Transistors

摘要

The mobility in MOSFETs is one of the most important parameter and the need to model it into an efficient and user-friendly model has been a necessity. The most common and widely used way is to define two parameters, the low field mobility μ_0 and the mobility attenuation factor θ. However, this simple model cannot be used in the case of p-MOSFETs fabricated on (110) silicon-oriented wafers since not only the surface roughness scattering but also the Coulomb and the phonon scattering mechanism must be taken into account into the model. Then, a new model has been developed to fit perfectly the hole mobility in these transistors, introducing a quadratic attenuation factor θ_2 as well as a Coulomb scattering coefficient α in addition to the usual low field mobility μ_0 and the conventional attenuation factor, renamed θ_1.