Enhanced Performance for OTFT on Glass with HfO_2 as Gate Dielectric by UV-Ozone Treatment

摘要

OTFTs on glass with high-k material HfO_2 as gate dielectric have been successfully fabricated. The devices show small sub-threshold slope, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with UV-ozone treatment has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without UV-ozone treated sample. This demonstrates that the UV-ozone treatment is a promising low-temperature annealing technique for improving the OTFT performance.