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Enhancement Mode Field-Effect Transistor with a Gate Dielectric Layer Recessed on a Composite Barrier Layer for High Static Performance
Enhancement Mode Field-Effect Transistor with a Gate Dielectric Layer Recessed on a Composite Barrier Layer for High Static Performance
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机译:增强型场效应晶体管,其栅极介电层位于复合势垒层上,具有较高的静态性能
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摘要
An enhancement mode field-effect transistor (E-FET) for high static performance is provided. A composite barrier layer comprises a lower barrier layer and an upper barrier layer. The upper barrier layer is arranged over the lower barrier layer and has a different polarization than the lower barrier layer. Further, the composite barrier layer comprises a gate opening. A channel layer is arranged under the composite barrier layer, such that a heterojunction is defined at an interface between the channel layer and the composite barrier layer. A gate dielectric layer is arranged over the composite barrier layer and within the gate opening. A gate electrode is arranged over the gate dielectric layer. A method for manufacturing the E-FET is also provided.
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