HfO_2 Inter-Poly Dielectric Characteristics with Interface Fluorine Passivation

摘要

In this paper, the reliabilities and insulating characteristics of the fluorinated hafnium oxide (HfO_2) inter-poly dielectric (IPD) through fluorine ion implantation are studied for the first time. HfO_2 IPD characteristics are strongly dependent on the fluorine implantation dosage. Due to the terminating dangling bonds and oxygen vacancies, reducing interface oxidation and smoothing interface roughness, optimized fluorinated HfO_2 can be used to drastically improve the IPD reliabilities; consequently, this study concludes that fluorinated HfO_2 IPD is suitable for mass production applications in the future stacked-gate flash memory technology.