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Fluorine Passivation of Dielectric for Superconducting Electronics
Fluorine Passivation of Dielectric for Superconducting Electronics
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机译:超导电子介质的氟钝化
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摘要
An amorphous silicon (a-Si) dielectric for superconducting electronics is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. Complete layers or thinner sub-layers of a-Si are formed by physical vapor deposition at low temperatures (350 C, e.g. ˜200 C) to prevent reaction with superconducting materials, then exposed to fluorine. The fluorine may be a component of a gas or plasma, or it may be a component of an interface layer. The fluorine is driven into the a-Si by heat (e.g., 350 C) or impact to passivate defects such as dangling bonds.
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