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Fluorine Passivation During Deposition of Dielectrics for Superconducting Electronics
Fluorine Passivation During Deposition of Dielectrics for Superconducting Electronics
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机译:超导电子介质沉积过程中的氟钝化
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摘要
A dielectric for superconducting electronics (e.g., amorphous silicon, silicon oxide, or silicon nitride) is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. A fluorinant (gas or plasma) is injected into a process chamber, either continuously or as a series of pulses, while the dielectric is being formed by chemical vapor deposition on a substrate. To further reduce defects, the silicon may be deposited from a silicon precursor that includes multiple co-bonded silicon atoms, such as disilane or trisilane.
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