InAs_yP_(1-y) Metamorphic Buffer Layers (MBLs) on InP Substrates for Mid-IR Diode Lasers

机译：INAS_YP_（1-Y）MID-IR二极管激光器的INP基板上的变质缓冲层（MBL）

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

InAs QWs grown with InAs_yP_(1-y) metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ～2.5μm@77K.

机译：在INP基板上使用INAS_YP_（1-Y）变质缓冲层生长的INAS QWS展示了中红外发射。一种新型的Al-AINASP / INGAAS SCH设计提供了改进的载体限制，允许INAS QW激光发射附近λ~2.5μm@77k。

著录项

来源
《Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference》|2009年||共2页
会议地点
作者
J. Kirch; T. Garrod; S. Kim; J. H. Park; J. C. Shin; L. J. Mawst; T. F. Kuech; X. Song; S. E. Babcock; I. Vurgaftman; J. R. Meyer;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TN24-53;
关键词
Semiconductor lasers; Infrared and far-infrared lasers;

机译：半导体激光器;红外线和远红外激光器;

相似文献

外文文献
中文文献
专利

1. InAs_yP_(1-y) metamorphic buffer layers on InP substrates for mid-IR diode lasers [J] . Jeremy Kirch, Toby Garrod, Sangho Kim, Journal of Crystal Growth . 2010,第8期

机译：用于中红外二极管激光器的InP衬底上的InAs_yP_（1-y）变形缓冲层
2. Metamorphic InAs_yP_(1-y) (y=0.30-0.75) and Al_δIn_(1-δ)As_yP_(1-y) buffer layers on InP substrates [J] . Steven S. Bui, Henry P. Lee, Kin Man Yu Applied Physics Letters . 2007,第21期

机译：InP衬底上的变质InAs_yP_（1-y）（y = 0.30-0.75）和Al_δIn_（1-δ）As_yP_（1-y）缓冲层
3. Carrier compensation and scattering mechanisms in Si-doped InAs_yP_(1-y) layers grown on InP substrates using intermediate InAs_yP_(1-y) step-graded buffers [J] . M. K. Hudait, Y. Lin, P. M. Sinha, Journal of Applied Physics . 2006,第6期

机译：使用中间InAs_yP_（1-y）逐步渐变缓冲液在InP衬底上生长的Si掺杂InAs_yP_（1-y）层中的载流子补偿和散射机理
4. InAs_yP_(1-y) Metamorphic Buffer Layers (MBLs) on InP Substrates for Mid-IR Diode Lasers [C] . J. Kirch, T. Garrod, S. Kim, Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference . 2009

机译：INAS_YP_（1-Y）MID-IR二极管激光器的INP基板上的变质缓冲层（MBL）
5. Science and applications of III-V graded anion metamorphic buffers on InP substrates. [D] . Lin, Yong. 2007

机译：InP基质上III-V级阴离子变质缓冲液的科学和应用。
6. The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate [O] . Min Zhang, Zuoxing Guo, Liang Zhao, 2018

机译：缓冲剂类型对InP（100）衬底上生长的In0.82Ga0.18As外延层的影响
7. InAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layer [O] . Mathews Ian P., OMahony Donagh, Gocalińska Agnieszka M., 2013

机译：使用渐变InxGa1-xAs-InP变质缓冲层的GaAs衬底上的InAlAs太阳能电池
8. 3 micron Diode Lasers Grown on (Al)GaInSb Compositionally Graded Metamorphic Buffer Layers. [R] . D. Wang G. Kipshidze L. Shterengas T. Hosoda W. L. Sarney 2012

机译：在（al）GaInsb组成梯度变质缓冲层上生长的3微米二极管激光器。

InAs_yP_(1-y) Metamorphic Buffer Layers (MBLs) on InP Substrates for Mid-IR Diode Lasers

摘要

著录项

相似文献

相关主题

期刊订阅