LONG-WAVELENGTH LASER DIODE BASED ON GALLIUM ARSENIDE WAFER EQUIPPED WITH METAMORPHIC BUFFER LAYER STRUCTURE

摘要

PROBLEM TO BE SOLVED: To solve the problem that, when an indium-containing material is grown on GaAs at the time of manufacturing a light emitting semiconductor device that can emit light having a wavelength between about 1.3 μm and about 1.55 μm, dislocation and other crystal defects occur and the performance of the semiconductor device is deteriorated, but an InP substrate is usually inferior in performance than a GaAs substrate even when an active region is grown by lattice matching the region to InP in order to prevent the performance deterioration of the device. ;SOLUTION: A light emitting device that can show better mechanical characteristics, electrical characteristics, thermal characteristics, and/or optical characteristics is obtained by making a GaAs substrate utilizable by changing the lattice constant of GaAs in steps by using a metamorphic buffer layer.;COPYRIGHT: (C)2003,JPO