Metamorphic InAs_yP_(1-y) (y=0.30-0.75) and Al_δIn_(1-δ)As_yP_(1-y) buffer layers on InP substrates

摘要

The authors report the growth and characterization of InAs_yP_(1-y) and Al_δIn_(1-δ)As_yP_(1-y) buffer layers on InP by metal-organic vapor phase epitaxy. Under optimized growth conditions, they achieved sheet resistances of 2.8X10~5 and 4.8 X 10~4 Ω/sq for single layer InAs_(0.44)P_(0.56) (0.5 μm) and step-graded InAs_(0.75)P_(0.25)/InAs_(0.42)P_(0.58) (0.075/0.5 μm) layers, respectively. A bowing parameter for InAs_yP_(1-y), of -0.22 eV is found based on photoreflectance measurement. When 0.5 μm thick Al_(0.11)In_(0.89)As_(.62)P_(.38) is grown, they obtain sheet resistance and sheet carrier concentration of 7.76 X 10~5 Ω/sq and 7.92 X 10~9 cm~(-2), respectively. This opens interesting possibilities for realizing high-performance metamorphic field-effect transistors based on strained InAs or InAs_yP_(1-y) (0.5 < y < 0.75) channel and AlInAsP buffer.