Peculiarities of Electrical Properties of Metal-Insulator-Semiconductor Capacitors Based on High-k Dielectric Stack Containing HfTiSiO:N and HfTiO:N Films

摘要

This paper describes the influence of electron beam irradiation and constant voltage stress on the electrical characteristics of metal-insulator-semiconductor structures, with double layer high-k dielectric stacks containing HfTiSiO:N and HfTiO:N films. The changes in the electrical properties were caused by charge trapping phenomena which is similar for e-beam irradiation and voltage stress cases. It was shown the advantages of an alternative methodology based on α-V representation (a = d[ln(J)]/d[ln(V)]) to distinguish different current flow mechanisms in ultra thin insulators in different voltage regimes.