FIRST PRINCIPLES STUDY OF ELECTROLUMINESCENCE IN ULTRA-THIN SILICON FILM

摘要

Optical gains in electroluminescence of ultra-thin Si films sandwiched between SiO_(2)s are calculated from first principles. The gain of the most efficient film is comparable to that of the bulk GaAs if one-order-of-magnitude higher density of carriers is assumed. The importance of the surface structure of the Si film is also investigated and the interface with quartz crystal is found to be favorable for efficient light-emission.