Pretreatment Approach to Improve Continuity of Ultra-thin Amorphous Silicon Films on Silicon Oxide

摘要

In one implementation, a method of forming an amorphous silicon layer on a substrate in a processing chamber is provided. The method includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate. The method further includes forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose the top surface of the substrate. The method further includes performing a plasma treatment on the patterned features. The method further includes depositing an amorphous silicon layer on the exposed top surface of the substrate and the patterned features. The method includes selectively removing the amorphous silicon layer from the top surface of the substrate and the top surface of the patterned features using an anisotropic etching process to provide patterned features filled in sidewall spacers formed from the amorphous silicon layer. It includes more.