Ferromagnetism in GaAs/InAs/GaAs Quantum Dot Layer delta-doped with Mn

机译：GaAs / Inas / GaAs量子点层中的铁磁性δ-掺杂有Mn

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Transport, magnetotransport and magnetic properties of structures GaAs/InAs/GaAs with the InAs quantum dot (QD) layer have been investigated in the temperature interval 4.2

机译：在温度间隔4.2 <300K中研究了结构GaAs / InAs / GaAs的结构GaAs / InAs / GaAs的运输，磁传输和磁性性能。该结构由一侧的Mn掺杂Δ掺杂磁性特性和来自另一侧的碳以增强p型导电性。鱿鱼磁力计检测到高达400 k的铁磁相。在低T.下观察到异常霍尔效应。研究了由于QD层引起的额外病症在导电通道中的作用。示出了由间隔物分离在结构的异常传输性质中分离出QD层的Mn层的波动电位的主要作用。由于在磁场中的旋转对准旋转来降低旋转翻转散射，在低T处观察到负磁阻。

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《Moscow International Symposium on Magnetism》|2015年|xix 791 p.|共4页
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Vladimir A. Kulbachinskii; Leonid N. Oveshnikov; Boris A. Aronzon;
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中图分类 TM271-53;
关键词
Diluted magnetic semiconductors; Ferromagnetism; Delta-Mn Doping; InAs Quantum Dots;

机译：稀释的磁半导体;铁磁性;Delta-Mn掺杂;INAS量子点;

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专利

1. Anomalous Hole Transport and Ferromagnetism in Doped with Mn GaAs/InGaAs/GaAs Quantum Well or GaAs/InAs/GaAs Quantum Dot Layer [J] . V. A. Kulbachinskii, P. V. Gurin, L. N. Oveshnikov Nanoscience and Nanotechnology Letters . 2012,第6期

机译：Mn GaAs / InGaAs / GaAs量子阱或GaAs / InAs / GaAs量子点层掺杂的异常空穴传输和铁磁性
2. Ferromagnetism in GaAs/lnAs/GaAs Quantum Dot Layer delta-doped with Mn [J] . Vladimir A. Kulbachinskii, Leonid N. Oveshnikov, Boris A. Aronzon Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2015,第Null期

机译：δ掺杂Mn的GaAs / lnAs / GaAs量子点层中的铁磁性
3. Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBE [J] . N. Halder, J. Suseendran, S. Chakrabarti, Journal of nanoscience and nanotechnology . 2010,第8期

机译：InAlGaAs和GaAs组合势垒厚度对MBE生长的InAs / GaAs量子点异质结构堆叠层中点形成持续时间的影响
4. Ferromagnetism in GaAs/InAs/GaAs Quantum Dot Layer delta-doped with Mn [C] . Vladimir A. Kulbachinskii, Leonid N. Oveshnikov, Boris A. Aronzon Moscow International Symposium on Magnetism . 2015

机译：GaAs / Inas / GaAs量子点层中的铁磁性δ-掺杂有Mn
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer [O] . Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman, 2014

机译：具有优化的GaAsSbN覆盖层的InAs / GaAs量子点的长波长室温发光
7. Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications [O] . Mokerov V.G., Fedorov Yu.V., Hook A.V., 2000

机译：在高频应用中，在成核量子点阈值以下和附近的InAs层厚度下，调制掺杂N-AlGaAs /（InAs / GaAs）/ GaAs超晶格的分子束外延

Ferromagnetism in GaAs/InAs/GaAs Quantum Dot Layer delta-doped with Mn

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