Effect of refractive index on the determination of layer thickness of 4H-SiC homo-epitaxial films

摘要

Room temperature infrared reflection spectra of 2 n-type homo-epitaxial epifilms have been measured in the work. The effect of the refractive index on the determination of layer thickness using traditional calculation measurement is studied and some improvements have been added to the measurement to improve the accuracy and stability of the measured results. Results of the improved method have great agreement with the results from SEM and both variance and mean relative error decrease an order of magnitude.