2D/3D NEGF modeling of the impact of random dopants/dopant aggregation in silicon nano-transistors

摘要

The discrete nature of dopants becomes apparent in nano-scaled devices leading to microvariability problems which cause large fluctuations in the performance of macroscopically identical devices. Since self-averaging fails, the approach reviewed here utilises self-consistent non-equilibrium Green function modelling to evaluate the effects of discrete random dopants in source and drain non-perturbatively.