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Quantum simulation of the Hubbard model with dopant atoms in silicon

机译:硅中掺杂原子的哈伯德模型的量子模拟

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摘要

In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose–Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasi-particle tunnelling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing valence bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model.
机译:在量子模拟中,在可控量子系统中探查了多体现象。最近,使用冷原子对Bose-Hubbard哈密顿量进行的模拟揭示了以前隐藏的局部相关性。但是,铁离子多体Hubbard现象(例如非常规超导性和自旋液体)更难以使用冷原子模拟。迄今为止,所需的单点测量和冷却仍然存在问题,而仅实现了整体测量。在这里,我们使用硅中的地下掺杂剂在低有效温度下以单点分辨率模拟了两点哈伯德哈密顿量。我们用原子分辨率测量自旋分辨态的准粒子隧穿图,找到干涉过程,从中量化纠缠熵和哈伯德相互作用。由自旋和轨道自由度确定的纠缠度随着价键长度的增加而增加。我们发现了可分离可调的哈伯德相互作用强度,适用于在较大的掺杂剂阵列中模拟强相关现象,从而建立了掺杂剂作为哈伯德模型量子模拟的平台。

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