Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation

机译：用于SiGe HBTS数值模拟的精确移动和能量松弛时间模型

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Carrier mobility and energy relaxation time analytical models for hydrodynamic simulation of silicon-germanium hetero-junction bipolar transistors (HBTs) have been derived. In addition, some issues related to hydrodynamic simulation in commercial tools are discussed.

机译：推导出用于硅 - 锗杂交接线双极晶体管（HBT）的流体动力模拟的载流动性和放松时间分析模型。此外，讨论了与商业工具中的流体动力学模拟有关的一些问题。

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《International Conference on Simulation of Semiconductor Process and Devices》|2009年||共4页
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作者
G. Sasso; N. Rinaldi; G. Matz; C. Jungemann;
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中图分类 TN3-53;
关键词
Device simulation; SiGe HBTs; Mobility; Energy relaxation time; Hydrodynamic models;

机译：设备仿真;SiGe HBT;移动性;能量放松时间;流体动力学模型;

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专利

1. SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time [J] . E. Ramirez-Garcia, M. Michaillat, F. Aniel, Solid-State Electronics . 2011,第1期

机译：基于使用掺杂，成分和应变相关的SiGe：C载流子迁移率和弛豫时间的流体力学建模的SiGe：C HBT渡越时间分析
2. Consistent Hydrodynamic and Monte-Carlo Simulationof SiGe HBTs Based on Table Modelsthe Relaxation Times [J] . B.Neinhüs, S.Decker, P.Graf, VLSI Design . 1998,第1a4期

机译：基于表模型的弛豫时间的SiGe HBT流体动力学和蒙特卡洛一致性模拟
3. Modeling and Numerical Simulation of a very High Speed SiGe HBT at High Temperature [J] . Maya Lakhdara, Sa?da Latreche Nanoscience and Nanotechnology . 2016,第1A期

机译：高温下高速SiGe HBT的建模与数值模拟
4. Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation [C] . G. Sasso, N. Rinaldi, G. Matz, International Conference on Simulation of Semiconductor Process and Devices . 2009

机译：用于SiGe HBTS数值模拟的精确移动和能量松弛时间模型
5. High frequency noise modeling and microscopic noise simulation for SiGe HBT and RF CMOS. [D] . Cui, Yan. 2006

机译：SiGe HBT和RF CMOS的高频噪声建模和微观噪声仿真。
6. Parallel simulations for QUAntifying RElaxation magnetic resonance constants (SQUAREMR): an example towards accurate MOLLI T1 measurements [O] . Christos G. Xanthis, Sebastian Bidhult, George Kantasis, 2015

机译：量化弛豫磁共振常数（SQUAREMR）的并行模拟：以精确的MOLLI T1测量为例
7. Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times [O] . B. Neinhüs, S. Decker, P. Graf, 1998

机译：基于桌面模型的SiGe HBTS一致的流体动力学和Monte-Carlo模拟弛豫时间
8. Uniform in Time Asymptotic and Numerical Methods for Propagation in Dielectric Exhibiting Fractional Relaxation and Efficient and Accurate Impedance Boundary Conditions for High-Order Numerical Schemes for the Time- Dependent Maxwell Equations [R] . Petropoulos, P. G. 2008

机译：电导传播的均匀时间渐近和数值方法表示时间依赖麦克斯韦方程组的高阶数值格式的分数弛豫和高效精确的阻抗边界条件

Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation

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