Atomistic approach for Boron Transient enhanced diffusion and clustering

摘要

A Kinetic Monte Carlo (KMC) approach has been applied to study the thermal evolution of Boron implant damage and diffusion in bulk silicon in a wide range of temperatures between 700°C and 1100°C, considering furnace, rapid thermal and spike annealing. Boron Transient Enhanced Diffusion (TED) and boron interstitial clustering (up to B{sub}3I{sub}3) have been considered with a consistent set of parameters for all the standard anneal cases, achieving a satisfactory agreement with experimental profiles and providing a good understanding of the main underlying microscopic mechanisms.