Structural Materials for NEMS/MEMS Devices

摘要

This paper reports the characterization of low temperature PECVD thin films as structural materials for NEMS/MEMS devices. Both silicon nitride and silicon carbide films deposited at relatively low temperatures exhibited much lower mechanical properties, compared to their respective bulk counterparts. Fourier transformation infrared spectra and energy dispersion spectra of the silicon nitride films indicated that the ratios of Si-N bonds in the films were strongly influenced by the deposition temperature, which should be attributed to the increase in its mechanical properties.