The Microwave Noise Behaviour Of Dual Material Gate Silicon On Insulator

摘要

This work presents the noise behaviour due to the applied Dual Material Gate (DMG) on the 75 nm n-channel Silicon On Insulator (SOI) device operating in the fully depletion mode, particularly for microwave circuit design. Influences of DMG properties namely the gate length ratio (L_1:L_2) and gate material workfunction difference (ΔΦM) as well as structural and operational parameters which are silicon thickness (T_(Si)) and threshold voltage (V_(TH)) setting variation on the noise performance were carried out on simulation basis using ATLAS 2D. Results show better noise performance in DMG as compare to the standard gate structure of FD-SOI devices. Higher V_(TH) for DMG design is recommended for minimized noise figure in line with the advantage of inverse V_(TH) roll-off characteristics for short channel effects suppression.