利用UHV／CVD技术在双层多孔硅上外延硅研究

摘要

利用UHV／CVD技术，在较低的温度下，在阳极氧化形成的双层多孔硅上，成功地生长了单晶性好、厚度均匀、电阻率分布合适的硅单晶外延层。这为进一步研制SOI材料与器件提供了所需的薄硅外延层。%Monocrystalline silicon on the double-layer porous silicon was grown by ultrahigh vacuum chemical vapor deposition at low temperature. The crystalline quality was good,the thickness was uniform and the resistance was suitable. The eiplayer was used for semiconductor in insulator material.