Atlas Simulation Based Performance Study of Fully-Depleted Dual-Material-Gate Silicon on Insulator MOSFETs

摘要

In this project the characteristics of fully depleted dual metal gate silicon on insulator is studied and presented, the result is compared with that of single material gate MOSFET the result indicates that short channel effect reduces in dual material gate MOSFET.Moreover the electrical characteristics of MOSFET can be controlled by gate length and work function engineering. So this work shows better performance of dual material gate with compare to that of single material gate silicon on insulator