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Method and apparatus for enhancing noise tolerance in dynamic silicon-on-insulator logic gates

机译:增强动态绝缘体上硅逻辑门的噪声容忍度的方法和装置

摘要

A method and apparatus for enhancing noise tolerance in dynamic Silicon-On-Insulator (SOI) logic gates improves the performance of dynamic gates using SOI technology. In particular implementations of logic, the logic inputs can be used to enable a pull-up chain constructed from a plurality of transistors. This pull-up chain holds the preset voltage on the summing node of the dynamic logic gate while the logic inputs are in a combination where parasitic bipolar transistors in the input logic chains conduct. The pull-up chain prevents spurious operation of the logic gate due to the conduction of the parasitic bipolar transistors. The pull-up also prevents spurious operation due to charge sharing that occurs when a device in the logic chain is enabled while another device is disabled. The charge sharing occurs due to charging the diffusion capacitance of the device which is disabled.
机译:一种用于提高动态绝缘体上硅(SOI)逻辑门的噪声容忍度的方法和装置,可以提高使用SOI技术的动态门的性能。在逻辑的特定实现中,逻辑输入可以用于启用由多个晶体管构成的上拉链。当逻辑输入处于组合状态时,该上拉链将预设电压保持在动态逻辑门的求和节点上,其中输入逻辑链中的寄生双极晶体管导通。上拉链可防止由于寄生双极晶体管的导通而导致逻辑门的虚假操作。上拉电阻还可以防止由于电荷共享而导致的虚假操作,因为电荷共享发生在逻辑链中的一个设备被使能而另一个设备被禁用时。由于对禁用的器件的扩散电容充电而发生电荷共享。

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