Static charge induced damage during lightly doped drain (LDD) by single wafer cleaning process

摘要

The present work reports some approaches to reduce the static charge defects induced during single wafer cleaning process. Increase conductivity of DIW with CO_2, adding backside rinse and IPA drying sequence optimization were evidenced to be effective by surface potential difference with Quantox tool. TEM and EELS were also used for analysis of volcano-like discharge defects.