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Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor

机译：凸源/漏极（RSD）和垂直掺杂漏极（LDD）多Si薄膜晶体管

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Feng-Tso Chien; Jing Ye; Wei-Cheng Yen; Chii-Wen Chen; Cheng-Li Lin; Yao-Tsung Tsai;
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专利

1. A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design [J] . Chien Feng-Tso, Chen Jian-Liang, Chen Chien-Ming, Solid-State Electronics . 2017,第nova期

机译：一种新颖的薄膜晶体管，具有阶梯式栅极重叠的轻掺杂漏极和凸起的源极/漏极设计
2. A Novel Design of Quasi-Lightly Doped Drain Poly-Si Thin-Film Transistors for Suppression of Kink and Gate-Induced Drain Leakage Current [J] . Park Jae Hyo, Seok Ki Hwan, Kim Hyung Yoon, Electron Device Letters, IEEE . 2015,第4期

机译：一种用于抑制扭结和栅极感应的漏电流的准轻掺杂漏极多晶硅薄膜晶体管的新颖设计
3. Analysis of Electrical Characteristics of Gate Overlapped Lightly Doped Drain (GOLDD) Polysilicon Thin-Film Transistors With Different LDD Doping Concentration [J] . A. Bonfiglietti, M. Cuscuna, A. Valletta, IEEE Transactions on Electron Devices . 2003,第12期

机译：不同LDD掺杂浓度的栅极重叠轻掺杂漏极（GOLDD）多晶硅薄膜晶体管的电学特性分析
4. Temperature Dependences of Transistor Characteristics of Single-Drain and Lightly-Doped-Drain Poly-Si TFTs [C] . M. Kimura, J. Taya, A. Nakashima International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors . 2013

机译：单漏极和轻掺杂多晶硅多晶硅晶体管的晶体管特性与温度的关系
5. Thin-film transistors with metal-replaced source and drain [D] . Zhang, Dongli 2008

机译：带有金属置换的源极和漏极的薄膜晶体管
6. Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor [O] . Feng-Tso Chien, Jing Ye, Wei-Cheng Yen, 2021

机译：凸源/漏极（RSD）和垂直掺杂漏极（LDD）多Si薄膜晶体管
7. Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability [O] . Zhi Ye, Lei Lu, Man Wong, 2016

机译：具有自对准源极/漏极区域的氧化锌薄膜晶体管掺杂注入硼以提高热稳定性

Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor

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