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Evaluation of EUVL-mask pattern defect inspection using 199-nm inspection optics

机译：使用199MM检测光学评估EUVL-MASK模式缺陷检查

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In this paper, we will report two evaluation results. One is the relationship between EUVL mask structure and image contrast values captured by 199nm inspection optics. The other is the influence of mask structure on defect inspection sensitivity.

机译：在本文中，我们将报告两个评估结果。一个是199nm检查光学器件捕获的EUVL掩模结构与图像对比度值之间的关系。另一个是掩模结构对缺陷检查敏感性的影响。

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《Conference on Photomask Technology》|2007年||共10页
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作者
Tsuyoshi Amano; Yasushi Nishiyama; Hiroyuki Shigemura; Tsuneo Terasawa; Osamu Suga; Hideaki Hashimoto; Norio Kameya; Shingo Murakami; Nobutaka Kikuiri;
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原文格式 PDF
正文语种
中图分类光刻、掩膜;
关键词
EUVL mask; mask defect; mask inspection; 199nm; Die-to-Die; reflected illumination;

机译：EUVL面具;掩模缺陷;面膜检查;199nm;死于死亡;反射照明;

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4. Evaluation of EUVL-mask pattern defect inspection using 199-nm inspection optics [C] . Tsuyoshi Amano, Yasushi Nishiyama, Hiroyuki Shigemura, Conference on Photomask Technology; 20070918-21; Monterey,CA(US) . 2007

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Evaluation of EUVL-mask pattern defect inspection using 199-nm inspection optics

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