MOCVD Compatible Atomic Layer Deposition Process of Al_2O_3 on SiC and Graphene/SiC Heterostructures

摘要

Amorphous aluminium oxide was deposited on silicon, silicon carbide and epitaxial graphene grown on silicon carbide by atomic layer deposition using a standard MOCVD equipment. The morphology and the electrical properties of the aluminium oxide layers on both substrates were determined and compared to aluminium oxide layers deposited with a standard atomic layer deposition equipment. The high-k material fabricated with the developed process show equal or better properties compared to the standard atomic layer deposition process.