METHOD FOR GRAPHENE FILM DEPOSITION ON SiC SUBSTRATE AND SiC SUBSTRATE WITH GRAPHENE

摘要

PROBLEM TO BE SOLVED: To provide a method for graphene film deposition on an SiC substrate which forms high-quality graphene by vacuum annealing at a lower temperature without requiring hydrogen annealing treatment, and to provide an SiC substrate with graphene.;SOLUTION: The method for graphene film deposition on an SiC substrate comprises: a precision processing step by catalyst-referred etching (CARE) which can flatten a single crystal SiC surface to such a degree that scratches are removed and a step-terrace structure appears; a washing step; and an annealing step of forming graphene on the SiC surface by heat treatment in a vacuum at 800-1,100°C for 1-10 min, wherein the number of layers of graphene is controlled to one or two by controlling the heat treatment conditions in the annealing step.;COPYRIGHT: (C)2012,JPO&INPIT