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机译:通过梯度生长法在4H-SiC(0001)衬底上的高迁移率化学气相沉积石墨烯
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Hebei, Peoples R China;
Graphene; Chemical vapor deposition; SiC substrate; Growth; Electrical transport property;
机译:通过化学气相沉积在w-AlN(0001),4度切角4H-SiC(0001),W(110)和Cr(110)衬底上生长氮化硼膜
机译:通过热壁化学气相沉积在4度偏轴(0001)和(0001)衬底上外延生长4H-SIC
机译:乙烯化学气相沉积法生长压力对4H-SiC衬底上生长的外延石墨烯的影响
机译:低压化学气相沉积,生长温度对4H-SiC(0001)基材生长的β-GA203薄膜特性的影响
机译:通过化学气相沉积法在透明基板上低温直接生长石墨烯薄膜。
机译:乙烯化学气相沉积法生长压力对4H-SiC衬底上生长的外延石墨烯的影响
机译:用乙烯化学气相沉积法研究生长压力对4H-siC衬底上外延石墨烯的影响