Study of Lag Effect in LPHD Plasma Etching of Si For MEMS Applications by Variable Time Steps in Numerical Methods

摘要

A simplified numerical model for two-dimensional etched profile evolution is developed based on dynamics of plasma～surface interactions. The Lag effect, which is an important phenomenon in plasma etching, is detected in fixed-aspect-ratio structures by this model. So it may provide aid to theory and experiment research of plasma etching. The setting of time steps in numerical simulations is also discussed in this paper and the optimal time steps are proposed and verified.