首页> 外国专利> Etching resist photosensitive resin composition, a pattern manufacturing method, MEMS structure and a manufacturing method thereof, a dry etching method, wet etching method, MEMS shutter device, and image display device

Etching resist photosensitive resin composition, a pattern manufacturing method, MEMS structure and a manufacturing method thereof, a dry etching method, wet etching method, MEMS shutter device, and image display device

机译:抗蚀抗蚀剂感光性树脂组合物,图案的制造方法,MEMS结构及其制造方法,干蚀刻法,湿蚀刻法,MEMS快门装置及图像显示装置

摘要

PPROBLEM TO BE SOLVED: To provide a photosensitive resin composition for an etching resist capable of forming a rectangular profile or a profile close to a rectangle even after a formed pattern is baked. PSOLUTION: A photosensitive resin composition for an etching resist contains (component A) a polymer having a monomer unit (a1) having a residue in which a carboxy group or a phenolic hydroxyl group is protected by an acid-decomposable group and a monomer unit (a2) having an epoxy group and/or an oxetanyl group, (component B) an optical acid-generating agent, and (component C) a solvent. PCOPYRIGHT: (C)2012,JPO&INPIT
机译:

要解决的问题:提供一种即使在烘烤形成的图案之后也能够形成矩形轮廓或接近矩形的轮廓的抗蚀剂用光敏树脂组合物。

解决方案:用于抗蚀剂的光敏树脂组合物包含(组分A)具有单体单元(a1)的聚合物,该单体单元具有通过酸可分解基团保护羧基或酚羟基的残基和具有环氧基和/或氧杂环丁烷基的单体单元(a2),(成分B)光学酸产生剂,(成分C)溶剂。

版权:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP5291744B2

    专利类型

  • 公开/公告日2013-09-18

    原文格式PDF

  • 申请/专利权人 富士フイルム株式会社;

    申请/专利号JP20110054361

  • 发明设计人 米澤 裕之;下野 勝弘;

    申请日2011-03-11

  • 分类号G03F7/039;G03F7/004;G03F7/40;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 16:58:47

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