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Curvature-Compensated CMOS Bandgap Reference with 1.8-V Operation

机译:曲率补偿CMOS带隙参考,具有1.8V操作

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The typical current mode bandgap voltage circuit is built up by two currents, one is proportional to V{sub}(BE) across the base-emitter of the parasitic BJT in CMOS process, the other is proportional to V{sub}T. The negative temperature coefficient of the former term compensates the positive temperature coefficient of the latter. But the temperature dependence of V{sub}(BE) is not linear and therefore doesn't completely cancel the linear temperature dependence of △V{sub}(BE), which is proportional to absolute temperature (PTAT). A curvature-compensated bandgap reference (BGR) with 1.8-V supply voltage is presented, which utilizes the different temperature-dependent emitter of the BJT to obtain the nonlinear current I{sub}(NL) to cancel the nonlinear term of I{sub}(VBE). The simulation results indicate the temperature coefficient (TC) of 8ppm/°C from -40°C to 80°C and a higher power supply rejection ration (PSRR) using 0.18um CMOS process. A scaled-down bandgap reference voltage can also be obtained by setting the resistor and current mirror in the proposed BGR circuit.
机译:典型的电流模式带隙电压电路由两个电流构建,一个是CMOS过程中寄生BJT的v {sub}(be)的比例,另一个与v {sub} t成比例。前术语的负温度系数补偿后者的正温度系数。但V {子}(BE)的温度依赖性是不是线性的,因此不能完全抵消△V {子}(BE),其正比于绝对温度(PTAT)的线性温度依赖性。提出了一种具有1.8V电源电压的曲率补偿的带隙参考(BGR),其利用BJT的不同温度相关的发射极来获得非线性电流I {子}(NL)以取消I {SUB的非线性项}(vbe)。仿真结果表明,使用0.18um CMOS工艺,从-40°C为-40°C的温度系数(Tc)为8ppm /°C至80°C和更高的电源排斥额定值(PSRR)。通过在所提出的BGR电路中设置电阻器和电流镜,还可以获得缩小的带隙参考电压。

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