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Room Temperature InGaSb Quantum Well Microcylinder Lasers at 2 μm Grown Monolithically on a Silicon Substrate

机译：室温IngaSB量子阱微凝集仪在2μm处在硅衬底上单片种植

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Room-temperature photopumped lasing operation near 2.0μm is reported from III-Sb microcylinders grown monolithically on silicon. High quality epitaxy is enabled by an interfacial misfit array. Growth, fabrication and device characterization is discussed.

机译：据III-SB Microcylinders在硅片上生长的III-SB Microcylinders报告了房间温度的光浸渗透操作近2.0μm。高质量的外延是通过界面错误数组启用的。讨论了生长，制造和设备表征。

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《IEEE LEOS Annual Meeting Conference》|2006年||共2页
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Tian Yang; Ganesh Balakrishnan; Ling Lu; Min-Hsiung Shih; J. D. OBrien; D. L. Huffaker;
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专利

1. Room temperature InGaSb quantum well microcylinder lasers at 2 μm grown monolithically on a silicon substrate [J] . Tian Yang, Ling Lu, Min-Hsiung Shih, Journal of Vacuum Science & Technology . 2007,第5期

机译：在硅衬底上整体生长的2μm室温InGaSb量子阱微柱面激光器
2. Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate [J] . Balakrishnan G., Huang S.H., Khoshakhlagh A., Electronics Letters . 2005,第9期

机译：在Si（100）衬底上单片生长的室温光泵浦InGaSb量子阱激光器
3. GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 m at Room Temperature [J] . Cerutti L., Rodriguez J.B., Tournie E. Photonics Technology Letters, IEEE . 2010,第8期

机译：基于GaSb的激光器，整体生长在硅基板上，在室温下发射1.55 m
4. Room Temperature InGaSb Quantum Well Microcylinder Lasers at 2 μm Grown Monolithically on a Silicon Substrate [C] . Tian Yang, Ganesh Balakrishnan, Ling Lu, IEEE LEOS Annual Meeting Conference . 2006

机译：室温IngaSB量子阱微凝集仪在2μm处在硅衬底上单片种植
5. Monolithic Integration of InAs Quantum Dot Lasers on Silicon Substrates [D] . Wan, Yating. 2017

机译：INAS量子点激光在硅基板上的单片集成
6. Room temperature continuous wave monolithic tunable THz sources based on highly efficient mid-infrared quantum cascade lasers [O] . Quanyong Lu, Donghai Wu, Saumya Sengupta, -1

机译：基于高效中红外量子级联激光器的室温连续波单片可调太赫兹源
7. Monolithic Passively Mode-Locked Lasers using Quantum Dot or Quantum Well Materials Grown on GaAs Substrates [O] . Y. -c. Xina, F. Lestera 2015

机译：使用量子点或量子阱材料在Gaas衬底上生长的单片被动锁模激光器
8. Much Improved Self-Organized In(0.53)Ga(0.47)As Quantum Wire Lasers Grown on (775)B InP Substrates by Molecular Beam Epitaxy [R] . Ohmori, K. , Hino, H. , Fujita, T. , 2006

机译：通过分子束外延在（775）B Inp衬底上生长的大量改进的自组织In（0.53）Ga（0.47）as量子线激光器

Room Temperature InGaSb Quantum Well Microcylinder Lasers at 2 μm Grown Monolithically on a Silicon Substrate

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