Wafer bonding is a critical step in micropackaging, guaranteeing that the active MEMS/IC devices are protected from the operating environment, and that devices achieve vertical integration. We have recently proposed a 3D wafer-level packaging technique for MEMS devices that is based on stacking of silicon and glass wafers manufactured using different micromachining technologies. The proposed wafer stacks can incorporate IC electronics, MEMS, microfluidics and microoptics, and are bonded together using patternable polymers such as Benzocyclobutene (BCB). In this paper we report progress in simultaneous wafer level bonding and interconnect formation without the need for conventional via drilling and filling. We provide fabrication process parameters, preliminary interconnect DC characterization, and design guidelines for selecting interconnect diameters in typical MEMS applications.
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