TOTAL DOSE BEHAVIOR OF PARTIALLY DEPLETED DELECUT SOI MOSFETS

机译：部分耗尽的Delecut SOI MOSFET的总剂量行为

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The effect of gamma-irradiation on the electrical characteristics of MOSFETs fabricated in DeleCut SOI wafers was defined. Properties of gate-oxide and BOX (buildup of radiation-induced charge in the oxide, interface state density and the initial concentration of traps in the oxide) were determined for DeleCut SOI MOSFETs and compared with that for thermal oxide on bulk silicon, Unibond and SIMOX wafers.

机译：定义了γ-辐射对Delecut SOI晶片制造的MOSFET电特性的影响。为Delecut SOI MOSFET测定栅极 - 氧化物和盒子中的氧化物中辐射诱导电荷的辐射诱导电荷，氧化物中的捕集电荷的初始浓度），并与散装硅，单轴和氧化物的热氧化物相比Simox晶片。

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《NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment 》|2005年||共6页
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作者
O.V. Naumova; A.A. Frantzusov; I.V Antonova; V. P. Popov; NATO;
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中图分类半导体技术 ;
关键词
gamma radiation; interface states; MOSFETs; SOI;

机译：伽马辐射;界面状态;MOSFET;SOI;

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1. Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs [J] . J. Alvarado, E. Boufouss, V. Kilchytska, Microelectronics & Reliability . 2010 ,第9a11期

机译：紧凑模型，用于部分耗尽的SOI MOSFET在高温下的单事件瞬态和总剂量效应
2. Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation [J] . E. Simoen, J.M. Rafi, A. Mercha, Solid-State Electronics . 2004 ,第6期

机译：质子辐照在深亚微米部分耗尽的SOI MOSFET中造成的总电离剂量损伤
3. Total-ionizing-dose induced enhanced hot-carrier injection effect in the 130 nm partially depleted SOI I/O nMOSFETs [J] . Zhou Hang, Liu Yang, Zhang Ying Japanese journal of applied physics . 2020 ,第3期

机译：在130nm部分耗尽的SOI I / O NMOSFET中，总电离剂诱导增强的热载体注射效果
4. TOTAL DOSE BEHAVIOR OF PARTIALLY DEPLETED DELECUT SOI MOSFETS [C] . O.V. Naumova, A.A. Frantzusov, I.V Antonova, NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment . 2005

机译：部分耗尽的Delecut SOI MOSFET的总剂量行为
5. Area efficient body contact for partially depleted silicon-on-insulator (SOI) MOSFETs. [D] . Daghighi, Arash. 2004

机译：适用于部分耗尽型绝缘体上硅（SOI）MOSFET的面积有效体接触。
6. Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor [O] . Chankeun Yoon, Seungjun Moon, Changhwan Shin -1

机译：FinFET和带铁电电容器的全耗尽绝缘体上硅（FDSOI）MOSFET的磁滞窗口研究
7. On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs [O] . Sheng-chun Wang, Pin Su, Kun-ming Chen, 2016

机译：关于部分耗尽sOI mOsFET的RF外部电阻提取

TOTAL DOSE BEHAVIOR OF PARTIALLY DEPLETED DELECUT SOI MOSFETS

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