Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation

摘要

This overview discusses the impact of ionizing irradiation on the static, the transient and the low-frequency noise characteristics of deep submicron partially depleted (PD) silicon-on-insulator (SOI) transistors. Tt is demonstrated that, while from a total ionizing dose (TID) damage viewpoint the technology is suitable for space applications, there is still a marked performance degradation. Evidence is provided that at least two basic mechanisms are involved. One is related to the radiation-induced hole trapping in the field oxide, giving rise to a subthreshold leakage current. In addition, the occurrence of majority carrier injection by electron valence-band (EVB) tunneling gives rise to some unexpected front-back channel coupling effects. A second yet unknown mechanism gives rise to a length-dependent response of the static device parameters, pointing to a laterally non-uniform charging of the gate oxide and/or the silicon body.