RELIABILITY AND ELECTRICAL FLUCTUATIONS IN ADVANCED SOI CMOS DEVICES

摘要

With SOI to be adapted as a mainstream technology in the forthcoming years, two issues are still of a critical interest regarding circuit applications: low frequency noise behavior and hot-carrier reliability, in state-of-the art SOI MOSFETs. Both are thoroughly investigated in this paper and a set of recent results in advanced CMOS SOI devices is given.