SiGe HBT and SiGe MOSFET analysis for high-speed optical networks

摘要

This paper provides a TCAD analysis of high performance SiGe heterostructure bipolar and MOSFET transistors fabricated by SiGe BiCMOS technology. The bipolar and MOSFET devices characteristics are presented. High values of operation frequencies, current gains and transconductances of the devices satisfy the requirements in RF mixed-signal IC development for wired optical communication systems.