首页> 外文会议>Electrochemical Society Meeting and Symposium on Electrochemical Process in ULSI and MEMS >A COMPARATIVE STUDY OF SLURRY FLOW AND TRANSPORT IN CMP POLISHING PADS OF THREE GROOVE ARRAYS
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A COMPARATIVE STUDY OF SLURRY FLOW AND TRANSPORT IN CMP POLISHING PADS OF THREE GROOVE ARRAYS

机译:三个凹槽阵列CMP抛光垫中泥浆流量和运输的比较研究

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摘要

Grooves play a key role in CMP slurry fluid mechanics, heat and polish debris removal, and mixing of fresh and spent chemistries. An experiment was developed using porous-media fluid mechanics to quantify the fluid flow resistance in the pad asperity layer relative to the grooves. New pad descriptors were obtained with which a 3-D fluid flow model was built of the full pad-wafer gap of a dual-axis polisher. Slurry motion was studied in concentric circular, XY grid, and radial grooves relative to adjacent texture areas and found in all cases to depart strongly from the direction of platen rotation. Resolved at groove scale, transient slurry mixing profiles in the pad-warbr^ap showed trailing wakes in the grooves having a length dependent- on the local orientation of the pad and wafer velocity vectors. Circular grooves created steady-state mixing patterns under the wafer, whereas XY and radial grooves induced cyclic mixing dynamics.
机译:凹槽在CMP浆液流体力学,热量和抛光碎片去除以及新鲜和花费化学物质的混合中起着关键作用。使用多孔介质流体力学开发了一种实验,以使焊盘粗糙层相对于凹槽量化的流体流动阻力。获得了新的焊盘描述符,利用该垫描述符,采用其中三维流体流动模型构成了双轴抛光机的全焊盘晶片间隙。在同心圆形,XY栅格和径向凹槽中研究了浆料运动,相对于相邻的纹理区域,并且在所有情况下都发现以从压板旋转方向强烈地偏离。在凹槽刻度下分离,垫中的瞬态浆料混合曲线在凹槽中显示在具有长度依赖性的凹槽中的尾随唤醒 - 在焊盘和晶片速度向量的局部取向上。圆形凹槽在晶片下产生稳态混合图案,而XY和径向槽诱导循环混合动力学。

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