首页> 外文会议>International Conference on Physics, Chemistry and Application of Nanostructures >STRUCTURE AND EXCITED STATE PROPERTIES OF CdSe/ZnS QUANTUM DOT-PORPHYRIN COMPLEXES FORMED BY SUPRAMOLECULAR DESIGN
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STRUCTURE AND EXCITED STATE PROPERTIES OF CdSe/ZnS QUANTUM DOT-PORPHYRIN COMPLEXES FORMED BY SUPRAMOLECULAR DESIGN

机译:由超分子设计形成的CDSE / ZnS量子点卟啉配合物的结构和激发状态性质

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Self-assembly principles of the formation of multiporphyrin arrays are extended toanchor the porphyrin triads on semiconductor CdSe/ZnS quantum dot (QD) surface. Comparing with individual counterparts (QD, pyridylsubstituted porphyrin H_(2)P(p-Pyr)_(4), and Zn-octaethylporphyrin chemical dimer (ZnOEP)_(2)Ph), the formation of heterocomposites "QD-porphyrin triad" results in the specific quenching of QD photoluminescence, accompanied by the dimer fluorescence strong quenching ((tau)_(SD)(approx)1.7 ps due to energy and/or electron transfer) and the noticeable decease of the extra-ligand H_(2)P(p-Pyr)_(4) fluorescence efficiency by 1.5-2 times via hole transfer H_(2)P->dimer.
机译:多硼素阵列形成的自组装原理是延伸托管在半导体CDSE / ZnS量子点(QD)表面上的卟啉三合会。与个体对应物(QD,吡啶基二卟啉卟啉H_(2)P(P-P-PYRIN)_(4)和Zn-八丁基卟啉化学二聚体(ZnOp)_(2)pH)进行比较,形成杂合物“QD-Porphyrin Triad”的形成导致QD光致发光的特异性猝灭,伴随着能量和/或电子转移引起的二聚体荧光强猝灭((Tau)_(SD)(约)1.7 PS)和超级配体H_的显着死亡:2 )P(P-Pyr)_(4)荧光效率通过空穴转移H_(2)P->二聚体的1.5-2次。

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