STRUCTURE AND EXCITED STATE PROPERTIES OF CdSe/ZnS QUANTUM DOT-PORPHYRIN COMPLEXES FORMED BY SUPRAMOLECULAR DESIGN

摘要

Self-assembly principles of the formation of multiporphyrin arrays are extended toanchor the porphyrin triads on semiconductor CdSe/ZnS quantum dot (QD) surface. Comparing with individual counterparts (QD, pyridylsubstituted porphyrin H_(2)P(p-Pyr)_(4), and Zn-octaethylporphyrin chemical dimer (ZnOEP)_(2)Ph), the formation of heterocomposites "QD-porphyrin triad" results in the specific quenching of QD photoluminescence, accompanied by the dimer fluorescence strong quenching ((tau)_(SD)(approx)1.7 ps due to energy and/or electron transfer) and the noticeable decease of the extra-ligand H_(2)P(p-Pyr)_(4) fluorescence efficiency by 1.5-2 times via hole transfer H_(2)P->dimer.