Effect of Laser Annealing on Optical Properties of ZnCdSe/ZnSSe Quantum Well Heterostructures.

摘要

A (Zn,Cd)(S,Se) MQW heterostructure is designed and fabricated to allowing control over the optical and electronic properties by an exposure to 488 nm Ar+ laser line. The laser-induced intermixing of elements results in a significant band edge blue shift with a moderate level of introduced defects. By controlling the light pattern on the sample surface this technique allows lateral pattering for fabricating e.g. ultra-narrow stripes or dot-like objects for optoelectronic devices.