首页> 外文会议>Heat Transfer Conference >FABRICATION OF THE TIP OF GaAs MICROWAVE PROBE BY WET ETCHING
【24h】

FABRICATION OF THE TIP OF GaAs MICROWAVE PROBE BY WET ETCHING

机译:通过湿法蚀刻制造GaAs微波探头的尖端

获取原文

摘要

In order to develop a new structure microwave probe, the fabrication of micro tip on the GaAs wafer surface was studied. The effects of the shape, direction, and size of etching mask to the fabricated tip were discussed in details. By finding the most suitable etching conditions, a tip having 7 μm high, 1.4 aspect ratio, and 50 nm curvature radius was formed. The experimental result indicates that the tip having the similar capability to sense the surface topography of materials as that of commercial atom force microscope (AFM) probe.
机译:为了开发新的结构微波探头,研究了GaAs晶片表面上的微尖的制造。详细讨论了蚀刻掩模对制造尖端的形状,方向和尺寸的影响。通过找到最合适的蚀刻条件,形成具有7μm高,1.4纵横比和50nm曲率半径的尖端。实验结果表明,具有相似能力的尖端以感测材料的表面形貌,作为商业原子力显微镜(AFM)探针的表面形貌。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号