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FABRICATION PROCESS OF SEMICONDUCTOR DEVICE, WET-ETCHING TREATMENT APPARATUS, AND WET-ETCHING METHOD

机译:半导体装置的制造过程,湿蚀刻处理装置以及湿蚀刻方法

摘要

PROBLEM TO BE SOLVED: To suppress generation of crystal deposits of etching liquid effectively.;SOLUTION: A wet-etching treatment apparatus comprises an etching chemical bath for storing wet-etching solution and performing wet-etching of a semiconductor wafer therein, a section for supplying nitrogen gas (N2) being supplied into the etching chemical bath during wet-etching operation, and a flow regulation section for feeding nitrogen gas (N2) supplied from the nitrogen gas supply section into the etching chemical bath during wet-etching operation and feeding nitrogen gas into the etching chemical bath continuously even when wet-etching is not performed.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:有效地抑制蚀刻液的晶体沉积的产生。解决方案:湿蚀刻处理设备包括用于存储湿蚀刻溶液并在其中进行半导体晶片的湿蚀刻的蚀刻化学浴,在湿蚀刻操作期间将被供应到蚀刻化学浴中的氮气(N2)供应,以及在湿蚀刻操作期间用于将从氮气供应部供应的氮气(N2)供应到蚀刻化学浴中并进给的流量调节部。即使不进行湿法刻蚀,氮气也会连续不断地进入刻蚀化学浴中。;版权所有:(C)2008,JPO&INPIT

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