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FABRICATION OF THE TIP OF GaAs MICROWAVE PROBE BY WET ETCHING

机译:湿法刻蚀制备GaAs微波探针的技巧

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In order to develop a new structure microwave probe, the fabrication of micro tip on the GaAs wafer surface was studied. The effects of the shape, direction, and size of etching mask to the fabricated tip were discussed in details. By finding the most suitable etching conditions, a tip having 7 μm high, 1.4 aspect ratio, and 50 nm curvature radius was formed. The experimental result indicates that the tip having the similar capability to sense the surface topography of materials as that of commercial atom force microscope (AFM) probe.
机译:为了开发一种新的结构的微波探针,研究了在GaAs晶片表面上微尖端的制造。详细讨论了蚀刻掩模的形状,方向和大小对制成的尖端的影响。通过找到最合适的蚀刻条件,形成具有7μm高,1.4长宽比和50 nm曲率半径的尖端。实验结果表明,该尖端具有与商业原子力显微镜(AFM)探针相似的感知材料表面形貌的能力。

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