Hydrogen Sensing Characteristics of a Pt-xide-Al_0.24Ga_0.76As (MOS) High Electron Mobility Transistor (HEMT)

摘要

The interesting hydrogen sensing performances of a Pt-oxide-AlGaAs (MOS) high electron mobility transistor (HEMT) are studied and demonstrated. The effects of hydrogen adsorption on device performances such as the threshold voltage shift A Vlh and drain saturation current variation AID, and transient response are presented. The AV,i, and Alp are decreased with increasing the operating temperature. This suggests that, at higher temperature, less hydrogen atoms diffuse through the Pt bulk and reach the interface between the Pt metal and oxide layer resulting from the relatively faster formation rate of hydroxyl on the Pt surface.