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Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT)

机译：温度对AlGaN / GaN高电子移动晶体管（HEMT）的电子电流的影响

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1. Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) [J] . Khanal Min P., Uprety Sunil, Mirkhani Vahid, Journal of Applied Physics . 2018,第21期

机译：100 keV质子辐照对AlGaN / GaN高电子迁移率晶体管（HEMT）的电子和光学性能的影响
2. Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double-Heterostructure High-Electron Mobility Transistor (DH-HEMT) on Sapphire [J] . Uiho Choi, Hyun-Seop Kim, Kyeongjae Lee, Physica status solidi . 2020,第7期

机译：蓝宝石上的AlGaN / AlN / GaN / AlN双异质结构高电子迁移率晶体管（DH-HEMT）的直流和射频特性
3. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress [J] . Chang Zeng, XueYang Liao, RuGuan Li, Journal of Applied Physics . 2015,第12期

机译：AlGaN / GaN高电子迁移率晶体管在高温工作应力下由于栅极下裂纹引起的漏极电流突变的研究
4. Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT) [C] . Yahyazadeh R., Hashempour Z. 2010 27th International Conference on Microelectronics Proceedings . 2010

机译：温度对AlGaN / GaN高电子迁移率晶体管（HEMT）中二维量子阱电子电流的影响
5. Design, simulation and fabrication of AlGaN/GaN normally-off high electron mobility transistors with investigation on temperature stability [D] . Yun-Hsiang, Wang. 2016

机译：常压高电子迁移率晶体管的设计，仿真和制造，具有温度稳定性研究
6. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band [O] . Junfeng Li, Shuman Mao, Yuehang Xu, 2018

机译：0.1μmAlGaN / GaN高电子迁移率晶体管（HEMT）工艺的改进大信号模型及其在W波段实用单片微波集成电路（MMIC）设计中的应用
7. Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor [O] . Tamura, Takahiro, Kotani, Junji, Kasai, Seiya, 2008

机译：多台面沟道AlGaN / GaN高电子迁移率晶体管中几乎与温度无关的饱和漏极电流
8. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs) [R] . Fitch, R. , Gillespie, J. , Jenkins, T. , 2002

机译：用于减少alGaN / GaN高电子迁移率晶体管（HEmT）中电流崩塌的表面钝化膜的比较

Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT)

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