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Effects of SrAl_2O_4 Homo-Buffer Layer on SrAl_2O_4:Eu Phosphors Film Grown on Glass by RF Sputtering

机译:SRAL_2O_4同源缓冲层对SRAL_2O_4的影响:RF溅射在玻璃上生长的欧盟磷光体膜

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The influence of pre-deposition of homo-buffer layers on film quality is studied for SrAl_2O_4:Eu~(2+) (SAO) crystalline film prepared by RF magnetron method. This preparation technique is necessary to prepare high quality films suitable for the development of SAO devices. Crystallinity and surface morphology were characterized by X-ray diffraction and scanning electron microscopy. After introducing a homo-buffer layer, not only the crystalline but also the surface morphology and adhesion of the film were obviously improved. These results imply that the buffer layer relaxes the strain due to the lattice mismatch between SAO and quartz glass, which improved the crystalline and adhesion of the film.
机译:通过RF磁控管法制备的SRAL_2O_4:EU〜(2+)(SAO)结晶膜研究了同源缓冲层对膜质量的影响。该制备技术是制备适合于SAO器件开发的高质量薄膜所必需的。结晶度和表面形态通过X射线衍射和扫描电子显微镜表征。在引入同型缓冲层后,不仅结晶而且显着提高了薄膜的表面形态和粘附性。这些结果意味着缓冲层由于SAO和石英玻璃之间的晶格错配而放松了菌株,这改善了薄膜的结晶和粘合性。

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