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首页> 外文期刊>Key Engineering Materials >Effects of SrAl_2O_4 Homo-Buffer Layer on SrAl_2O_4: Eu Phosphors Film Grown on Glass by RF Sputtering
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Effects of SrAl_2O_4 Homo-Buffer Layer on SrAl_2O_4: Eu Phosphors Film Grown on Glass by RF Sputtering

机译:SrAl_2O_4均质缓冲层对RF溅射在玻璃上生长的SrAl_2O_4:Eu荧光粉薄膜的影响

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摘要

The influence of pre-deposition of homo-buffer layers on film quality is studied for SrAl_2O_4:Eu~(2+) (SAO) crystalline film prepared by RF magnetron method. This preparation technique is necessary to prepare high quality films suitable for the development of SAO devices. Crystallinity and surface morphology were characterized by X-ray diffraction and scanning electron microscopy. After introducing a homo-buffer layer, not only the crystalline but also the surface morphology and adhesion of the film were obviously improved. These results imply that the buffer layer relaxes the strain due to the lattice mismatch between SAO and quartz glass, which improved the crystalline and adhesion of the film.
机译:研究了用RF磁控管方法制备的SrAl_2O_4:Eu〜(2+)(SAO)结晶膜对均质缓冲层的预沉积对膜质量的影响。这种制备技术对于制备适合于SAO装置开发的高质量薄膜是必需的。通过X射线衍射和扫描电子显微镜表征结晶度和表面形态。引入均质缓冲层后,不仅结晶性得到改善,而且膜的表面形态和粘附性也得到明显改善。这些结果表明,由于SAO和石英玻璃之间的晶格失配,缓冲层可以缓解应变,从而改善了薄膜的结晶性和粘附性。

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